? 2014 ixys corporation, all rights reserved IXYP15N65C3 v ces = 650v i c110 = 15a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.5v t fi(typ) = 28ns ds100542a(7/14) extreme light punch through igbt for 20-60khz switching features ? optimized for 20-60khz switching ? square rbsoa ? avalanche rated ? short circuit capability ? international standard package advantages ? high power density ? extremely rugged ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts ? high frequency power inverters symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 250 ? a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 10 ? a t j = 150 ? c 150 ? a i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 15a, v ge = 15v, note 1 1.96 2.50 v t j = 150 ? c 2.45 v symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 38 a i c110 t c = 110c 15 a i cm t c = 25c, 1ms 80 a i a t c = 25c 5 a e as t c = 25c 100 mj ssoa v ge = 15v, t vj = 150c, r g = 20 ? i cm = 30 a (rbsoa) clamped inductive load @v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 8 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 200 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 3g xpt tm 650v igbt genx3 tm g = gate c = collector e = emitter tab = collector g c e to-220 tab preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXYP15N65C3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 15a, v ce = 10v, note 1 5.0 8.5 s c ie s 583 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 37 pf c res 13 pf q g(on) 19 nc q ge i c = 15a, v ge = 15v, v ce = 0.5 ? v ces 4 nc q gc 10 nc t d(on) 15 ns t ri 20 ns e on 0.27 mj t d(off) 68 ns t fi 28 ns e of f 0.23 0.40 mj t d(on) 15 ns t ri 21 ns e on 0.53 mj t d(off) 80 ns t fi 42 ns e off 0.24 mj r thjc 0.75 c/w r thcs 0.50 c/w inductive load, t j = 25c i c = 15a, v ge = 15v v ce = 400v, r g = 20 ? note 2 inductive load, t j = 150c i c = 15a, v ge = 15v v ce = 400v, r g = 20 ? note 2 to-220 (ixyp) outline pins: 1 - gate 2 - collector 3 - emitter prelimanary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2014 ixys corporation, all rights reserved IXYP15N65C3 fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c - amperes v ge = 15 v 14 v 13 v 12 v 10 v 7 v 9 v 11 v 8 v fig. 2. extended output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15 v 8 v 9 v 11 v 13 v 12 v 14 v 10 v fig. 3. output characteristics @ t j = 150oc 0 5 10 15 20 25 30 00.511.5 22.533.544.5 v ce - volts i c - amperes v ge = 15 v 14 v 13 v 12 v 10 v 9 v 11 v 8 v 7 v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15 v i c = 15 a i c = 7.5 a i c = 30 a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 8 9 10 11 12 13 14 15 v ge - volts v ce - volts 30 a t j = 25oc 15 a i c = 7.5 a fig. 6. input admittance 0 5 10 15 20 25 30 35 40 5 6 7 8 9 10111213 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYP15N65C3 fig. 7. transconductance 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 15 20 25 30 35 i c - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 10. reverse-bias safe operating area 0 5 10 15 20 25 30 35 100 200 300 400 500 600 700 v ce - volts i c - amperes t j = 150oc r g = 20 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 02468101214161820 q g - nanocoulombs v ge - volts v ce = 325v i c = 15a i g = 10ma fig. 9. capacitance 10 100 1,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mh z c ies c oes c res
? 2014 ixys corporation, all rights reserved IXYP15N65C3 fig. 12. inductive switching energy loss vs. gate resistance 0.0 0.2 0.4 0.6 0.8 1.0 20 30 40 50 60 70 80 90 100 r g - ohms e off - millijoules 0 1 2 3 4 5 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 15 a i c = 30 a fig. 15. inductive turn-off switching times vs. gate resistance 15 20 25 30 35 40 45 50 55 60 20 30 40 50 60 70 80 90 100 r g - ohms t f i - nanoseconds 40 60 80 100 120 140 160 180 200 220 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 15 a i c = 30 a fig. 13. inductive switching energy loss vs. collector current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 8 1012141618202224262830 i c - amperes e off - millijoules 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 e on - millijoules e off e on - - - - r g = 20 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 e on - millijoules e off e on - - - - r g = 20 ? , v ge = 15v v ce = 400v i c = 15 a i c = 30 a fig. 16. inductive turn-off switching times vs. collector current 15 20 25 30 35 40 45 50 55 8 1012141618202224262830 i c - amperes t f i - nanoseconds 40 50 60 70 80 90 100 110 120 t d(off) - nanoseconds t f i t d(off) - - - - r g = 20 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 50 55 60 65 70 75 80 85 90 t d(off) - nanoseconds t f i t d(off) - - - - r g = 20 ? , v ge = 15v v ce = 400v i c = 30 a i c = 15 a
ixys reserves the right to change limits, test conditions, and dimensions. IXYP15N65C3 ixys ref: ixy_15n65c3(31)5-21-13 fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 8 1012141618202224262830 i c - amperes t r i - nanoseconds 10 12 14 16 18 20 22 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 20 ? , v ge = 15v v ce = 400v t j = 125oc, 25oc fig. 20. inductive turn-on switching times vs. junction temperature 10 20 30 40 50 60 70 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 13 14 15 16 17 18 19 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 20 ? , v ge = 15v v ce = 400v i c = 30 a i c = 15 a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 20 30 40 50 60 70 80 90 100 r g - ohms t r i - nanoseconds 0 10 20 30 40 50 60 70 80 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 15 a i c = 30 a
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